Overview of the Expanded Collaboration

Infineon Technologies and SolarEdge Technologies have significantly expanded their strategic collaboration to develop advanced solid-state circuit breaker (SSCB) technology. This joint initiative is specifically targeted at high-voltage direct-current (DC) power distribution within AI and hyperscale data centres. The partnership is designed to address critical protection challenges that are rapidly emerging as the industry transitions toward 800 VDC power architectures. Under the terms of this extended collaboration, SolarEdge is leading the development of the comprehensive SSCB solution, while Infineon is supplying the foundational silicon carbide (SiC) JFET technology required for these next-generation protection devices.

Technical Mechanics of Solid-State Circuit Breakers

Protecting direct-current systems presents fundamentally different engineering challenges compared to conventional alternating current (AC) architectures. Because DC lacks a natural current zero, mechanical interruption is inherently more difficult due to the persistent risk of sustained arcing. Consequently, traditional electromechanical breakers require considerably more time to safely interrupt a fault. Solid-state circuit breakers circumvent this physical limitation by detecting and interrupting DC faults within a few microseconds, entirely without relying on mechanical contacts. This ultra-fast response mechanism is crucial for isolating faults before they propagate through the power distribution network. Furthermore, it maintains selectivity across the system, significantly reducing the risk of catastrophic damage to sensitive compute and power equipment.

Building on the Solid-State Transformer Foundation

The development of this new SSCB technology builds directly upon the companies' prior collaboration regarding SolarEdge's solid-state transformer (SST) platform, which was officially announced in November 2025. The SST platform is engineered to convert medium-voltage power, operating in the range of 13.8 kV to 34.5 kV, directly to 800-1,500 VDC. This highly efficient architecture is intended to drastically reduce the number of conversion stages between the electrical grid and the IT load, while achieving conversion efficiencies of more than 99 percent. The newly announced SSCB development will focus specifically on the distribution layer situated between the solid-state transformer and the compute rack, complementing their existing work on a comprehensive DC-native power architecture.

Market Context: The Shift to 800 VDC Architectures

The industry-wide move towards higher-voltage DC distribution is being aggressively driven by the exponential rise in AI compute density and the escalating power requirements of modern data-centre infrastructure. As rack power levels and overall facility loads continue to surge, reducing conversion stages is becoming increasingly important for operational viability. A DC-based architecture not only minimizes conversion losses but also significantly reduces the physical equipment required across the entire power chain. Consequently, data-centre operators and infrastructure suppliers are actively examining higher-voltage DC architectures as a highly effective alternative to conventional power-distribution designs for demanding AI workloads.

Implications for AI Data Center Operations

For AI data centres, operating high-density infrastructure at 800 VDC demands uncompromising efficiency and robust protection. Shuki Nir, Chief Executive Officer of SolarEdge, highlighted that solid-state protection will enable operators to achieve ultra-fast and dependable fault isolation without sacrificing conversion performance, noting that Infineon's silicon carbide technology makes this practical at scale. Andreas Weisl, Executive Vice President and Chief Sales Officer, Industrial & Infrastructure at Infineon, emphasized that the growth of AI infrastructure increases the need for faster power distribution systems. By extending protection directly to the rack, the architecture supports higher power densities while strictly limiting electrical losses.

Future Outlook for DC Power Distribution

Looking ahead, the companies are positioning SSCB technology as an indispensable component of an end-to-end DC powertrain that extends seamlessly from the medium-voltage grid connection down to the compute rack. Faster fault protection will remain a key requirement if these advanced architectures are to be successfully deployed at higher power levels. The integration of SiC JFET-based SSCBs will ensure that the industry can maintain the stringent reliability and equipment protection standards necessary for the next generation of hyperscale AI computing environments.