Overview of the Extended Collaboration

On September 9, 2026, Infineon Technologies AG and SolarEdge Technologies, Inc. announced a significant extension of their collaboration to advance solid-state circuit breaker (SSCB) technology. This strategic partnership is specifically tailored for high-voltage direct current distribution within AI and hyperscale data centers. The collaboration directly addresses a critical engineering challenge in the adoption of 800 Volts direct current (VDC) architecture: ensuring the safe operation of increasingly power-dense infrastructure through ultra-fast fault isolation.

Technical Details of Solid-State Circuit Breakers

The core of this collaboration lies in overcoming the fundamental differences between alternating current (AC) and direct current (DC) protection. Unlike conventional AC systems, DC circuits lack a natural current zero, making mechanical interruption highly challenging due to arcing and comparatively slow response times. To resolve this, the newly developed SSCB technology is engineered to interrupt DC faults orders of magnitude faster than traditional electromechanical breakers. Operating within a few microseconds and devoid of mechanical contacts to separate, these solid-state devices ensure selectivity while maintaining high efficiency. In this joint effort, SolarEdge is leading the design of the SSCB solution, while Infineon supplies its advanced silicon carbide (SiC) JFET technology, specifically its CoolSiC JFET devices, which form the core of the protection hardware.

Integration with Solid-State Transformer Platforms

This latest development builds directly upon the solid-state transformer (SST) platform utilizing Infineon SiC components, which was first announced in November 2025. The SST is designed to facilitate direct medium-voltage (13.8-34.5 kV) to 800-1500 VDC conversion at over 99 percent efficiency. By collapsing multiple conversion stages into a single, compact solution, the SST significantly reduces the physical footprint of power infrastructure. The extension into SSCB technology addresses a critical gap in the distribution layer situated between the SST and the compute rack, thereby advancing a comprehensive, grid-to-rack DC-native power architecture.

Market Context and Industry Challenges

The push toward higher-voltage DC distribution is being aggressively driven by rapidly increasing AI compute densities. As data infrastructures become more complex, they also become more vulnerable to electrical faults. Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial and Infrastructure at Infineon, highlighted that this vulnerability drives the demand for smarter, faster, and more robust power distribution systems. The industry is actively seeking alternatives to conventional AC architectures to handle the massive power requirements of modern AI workloads without compromising safety or thermal management.

Implications for AI Data Centers

For AI data centers, the transition to 800 VDC with solid-state protection delivers several critical advantages:

  • Ultra-fast fault isolation within microseconds to protect high-value compute equipment.
  • Elimination of mechanical contacts, preventing arcing issues inherent in DC interruption.
  • Support for more compact and higher-density DC distribution designs.

Shuki Nir, Chief Executive Officer of SolarEdge, emphasized that high-density AI infrastructure at 800 VDC demands uncompromising efficiency and protection. The integration of SSCB technology enables operators to achieve ultra-fast and dependable fault isolation without sacrificing conversion performance, making silicon carbide technology practical at scale.

Future Outlook for DC-Native Power Architectures

Looking ahead, the collaboration paves the way for a fully DC-native power architecture. Leveraging more than 15 years of leadership in DC-coupled power electronics, SolarEdge is developing an 800 VDC powertrain for AI factories. This DC-native chain is designed to carry power seamlessly from the medium-voltage grid connection through conversion, distribution, and protection directly to the compute rack. Supported by Infineon’s broad portfolio of silicon, silicon carbide, and gallium nitride solutions, this comprehensive approach supports the decarbonization of AI infrastructure. Ultimately, the joint focus on lower losses, reduced environmental impact, and improved total cost of ownership will define the next generation of sustainable, high-performance data centers.